sot-23 plastic-encapsulate diodes switching diode features mmb d2004s type is a silicon switching dual in series diode manufactured by the epitaxial planar process, designed for applications requiring high voltage capability. power dissipation marking : b6d maximum ratings @t a =25 parameter symbol limit unit non-repetitive peak r everse v oltage v rm 300 v dc blocking voltage v r 240 v peak repetitive current i o 200 ma continuous forward current i f 225 ma peak repetitive forward current i frm 625 ma forward surge current t=1 s i fsm 4.0 a forward surge current t=1s i fsm 1.0 a power dissipation pd 250 mw junction t emperature t j 150 storage t emperature r ange t stg -55~+ 150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol test conditions min max unit reverse breakdown voltage v (br) i r = 100 a 240 v reverse voltage leakage current i r v r =240v 0.1 a forward voltage v f i f =100ma 1 v diode capacitance c d v r =0v f=1mhz 5 pf reveres recovery time t rr i f =i r =30ma,r l =100 ? 50 ns sot-23 1 2 3 mmbd 4 6 2012-1 willas electronic corp. preliminary
outline drawing dimensions in inches and (millimeters) sot-23 rev.d .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-1 willas electronic corp. sot-23 plastic-encapsulate diodes mmbd 4 6 preliminary
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